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TUSB8041IPAPQ1 Datasheet(PDF) 10 Page - Texas Instruments |
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TUSB8041IPAPQ1 Datasheet(HTML) 10 Page - Texas Instruments |
10 / 48 page TUSB8041-Q1 SLLSEE6B – JULY 2014 – REVISED JANUARY 2016 www.ti.com 7.4 Thermal Information TUSB8041-Q1 THERMAL METRIC(1) PAP UNIT 64 PINS RθJA Junction-to-ambient thermal resistance(2) 26.2 RθJCtop Junction-to-case (top) thermal resistance(3) 11.5 RθJB Junction-to-board thermal resistance(4) 10.4 °C/W ψJT Junction-to-top characterization parameter(5) 0.2 ψJB Junction-to-board characterization parameter(6) 10.3 RθJCbot Junction-to-case (bottom) thermal resistance(7) 0.6 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953). (2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC- standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7). (7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Spacer 7.5 Electrical Characteristics, 3.3-V I/O over operating free-air temperature range (unless otherwise noted) PARAMETER OPERATION TEST CONDITIONS MIN MAX UNIT VIH High-level input voltage(1) VDD33 2 VDD33 V 0 0.8 VIL Low-level input voltage(1) VDD33 V JTAG pins only 0 0.55 VI Input voltage 0 VDD33 V VO Output voltage(2) 0 VDD33 V tt Input transition time (trise and tfall) 0 25 ns Vhys Input hysteresis(3) 0.13 x VDD33 V VOH High-level output voltage VDD33 IOH = -4 mA 2.4 V VOL Low-level output voltage VDD33 IOL = 4 mA 0.4 V IOZ High-impedance, output current(2) VDD33 VI = 0 to VDD33 ±20 µA High-impedance, output current with IOZP internal pullup or pulldown VDD33 VI = 0 to VDD33 ±250 µA resistor(4) II Input current(5) VDD33 VI = 0 to VDD33 ±15 µA (1) Applies to external inputs and bidirectional buffers. (2) Applies to external outputs and bidirectional buffers. (3) Applies to GRSTz. (4) Applies to pins with internal pullups/pulldowns. (5) Applies to external input buffers. 10 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated |
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