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TUSB8041IPAPQ1 Datasheet(PDF) 10 Page - Texas Instruments

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Part # TUSB8041IPAPQ1
Description  Automotive Four-Port USB 3.0 Hub
Download  48 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TUSB8041IPAPQ1 Datasheet(HTML) 10 Page - Texas Instruments

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TUSB8041-Q1
SLLSEE6B – JULY 2014 – REVISED JANUARY 2016
www.ti.com
7.4 Thermal Information
TUSB8041-Q1
THERMAL METRIC(1)
PAP
UNIT
64 PINS
RθJA
Junction-to-ambient thermal resistance(2)
26.2
RθJCtop
Junction-to-case (top) thermal resistance(3)
11.5
RθJB
Junction-to-board thermal resistance(4)
10.4
°C/W
ψJT
Junction-to-top characterization parameter(5)
0.2
ψJB
Junction-to-board characterization parameter(6)
10.3
RθJCbot
Junction-to-case (bottom) thermal resistance(7)
0.6
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
Spacer
7.5 Electrical Characteristics, 3.3-V I/O
over operating free-air temperature range (unless otherwise noted)
PARAMETER
OPERATION
TEST CONDITIONS
MIN
MAX
UNIT
VIH
High-level input voltage(1)
VDD33
2
VDD33
V
0
0.8
VIL
Low-level input voltage(1)
VDD33
V
JTAG pins only
0
0.55
VI
Input voltage
0
VDD33
V
VO
Output voltage(2)
0
VDD33
V
tt
Input transition time (trise and tfall)
0
25
ns
Vhys
Input hysteresis(3)
0.13 x VDD33
V
VOH
High-level output voltage
VDD33
IOH = -4 mA
2.4
V
VOL
Low-level output voltage
VDD33
IOL = 4 mA
0.4
V
IOZ
High-impedance, output current(2)
VDD33
VI = 0 to VDD33
±20
µA
High-impedance, output current with
IOZP
internal pullup or pulldown
VDD33
VI = 0 to VDD33
±250
µA
resistor(4)
II
Input current(5)
VDD33
VI = 0 to VDD33
±15
µA
(1)
Applies to external inputs and bidirectional buffers.
(2)
Applies to external outputs and bidirectional buffers.
(3)
Applies to GRSTz.
(4)
Applies to pins with internal pullups/pulldowns.
(5)
Applies to external input buffers.
10
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