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STF10N65K3 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF10N65K3 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 21 page DocID15732 Rev 4 5/21 STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 Electrical characteristics 21 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 7.2 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 28.8 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 7 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 7 A, di/dt = 100A/µs VDD = 60 V (see Figure 22) -320 ns Qrr Reverse recovery charge - 2 µC IRRM Reverse recovery current - 13 A trr Reverse recovery time ISD = 7 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) -410 ns Qrr Reverse recovery charge - 2.9 µC IRRM Reverse recovery current - 14 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V |
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