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HYB25L256160AC-8 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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HYB25L256160AC-8 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 55 page Data Sheet 9 V1.1, 2003-04-16 HYB25L256160AC 256-Mbit Mobile-RAM Pin Configuration Figure 2 Block Diagram (16 Mbit × 16, 13 / 9 / 2 Addressing) Note: 1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does not represent an actual circuit implementation. 2. DQM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional DQ signals. Memory Array Bank 1 8192 x 512 x 16 Bit Memory Array Bank 2 8192 x 512 x 16 Bit Memory Array Bank 3 8192 x 512 x 16 Bit SPB04124_256M Column Address Counter Row Decoder Memory Array Bank 0 8192 x 512 x 16 Bit Row Decoder Row Decoder Row Decoder Row Address Buffer Column Address Buffer Refresh Counter A0 - A12, BA0, BA1 A0 - A8, AP, BA0, BA1 Column Addresses Row Addresses Input Buffer Output Buffer DQ0 - DQ15 Control Logic & Timing Generator |
Similar Part No. - HYB25L256160AC-8 |
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Similar Description - HYB25L256160AC-8 |
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