 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HYB25D256800BT-6 Datasheet(PDF) 9 Page - Infineon Technologies AG |
|
||||||||||||||||||||||||||||||
HYB25D256800BT-6 Datasheet(HTML) 9 Page - Infineon Technologies AG |
|
|
9 / 77 page  HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B Page 9 of 77 2003-01-09, V1.1 Functional Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268, 435, 456 bits. The 256Mb DDR SDRAM is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double- data-rate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256Mb DDR SDRAM consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the regis- tration of an Active command, which is then followed by a Read or Write command. The address bits regis- tered coincident with the Active command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the Read or Write com- mand are used to select the starting column location for the burst access. Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide detailed infor- mation covering device initialization, register definition, command descriptions and device operation. Initialization DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. The following criteria must be met: No power sequencing is specified during power up or power down given the following criteria: VDD and VDDQ are driven from a single power converter output AND VTT meets the specification AND VREF tracks VDDQ/2 or The following relationship must be followed: VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3V VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3V The DQ and DQS outputs are in the High-Z state, where they remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200 ms delay prior to applying an executable command. Once the 200 ms delay has been satisfied, a Deselect or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a Precharge ALL command should be applied. Next a Mode Register Set command should be issued for the Extended Mode Register, to enable the DLL, then a Mode Register Set command should be issued for the Mode Register, to reset the DLL, and to program the operat- ing parameters. 200 clock cycles are required between the DLL reset and any executable command. During the 200 cycles of clock for DLL locking, a Deselect or NOP command must be applied. After the 200 clock cycles, a Precharge ALL command should be applied, placing the device in the “all banks idle” state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a Mode Register Set command for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. |
Similar Part No. - HYB25D256800BT-6 |
|
Similar Description - HYB25D256800BT-6 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
