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HYB25D256800BT Datasheet(PDF) 5 Page - Infineon Technologies AG |
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HYB25D256800BT Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 29 page HYB25D256[800/160]BT(L)-[5/5A] 256MBit Double Data Rata SDRAM Preliminary DDR400 Data Sheet Addendum 2003-01-10, V0.9 Page 5 of 29 Block Diagram (32Mb x 8) 1 DQS CK, CK DLL RAS CAS CK CS WE CK Column-Address Counter/Latch Mode 10 A0-A12, BA0, BA1 CKE 15 I/O Gating DM Mask Logic Bank0 Memory Array (8192 x 512x 16) Sense Amplifiers Bank1 Bank2 Bank3 13 9 1 2 2 8 8 8 Input Register 1 1 1 1 1 16 16 2 16 clk out Data Mask Data CK, COL0 COL0 COL0 clk in DQS Generator 8 8 8 8 8 16 DQ0-DQ7, DM DQS 1 Write FIFO & Drivers Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does not represent an actual circuit implementation. Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi- rectional DQ and DQS signals. Column Decoder 512 (x16) Registers 8192 13 CK |
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