STW19NM60N datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STW19NM60N

Description	Automotive-grade N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in a TO-247 package

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Electrical characteristics

STW19NM60N

4/13

DocID024392 Rev 2

2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 600 V

1

µA

VDS = 600 V, TJ=125 °C

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±25 V

±100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID=6.5 A

0.260 0.285

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f =1 MHz,

VGS = 0

-

1000

-

pF

Coss

Output capacitance

-

60

-

pF

Crss

Reverse transfer

capacitance

-3

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Output equivalent

capacitance

VDS = 0, to 480 V, VGS=0

-

225

-

pF

Rg

Intrinsic resistance

f=1 MHz open drain

-

3.5

-

Ω

Qg

Total gate charge

VDD = 480 V, ID = 13 A

VGS = 10 V

(see Figure 15)

-35

-

nC

Qgs

Gate-source charge

-

6

-

nC

Qgd

Gate-drain charge

-

20

-

nC

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