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STS9P2UH7 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS9P2UH7 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page January 2015 DocID025143 Rev 3 1/15 This is information on a product in full production. www.st.com STS9P2UH7 P- channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STS9P2UH7 20 V 0.0225 Ω @ 4.5 V 9 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Ultra logic level Applications Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Table 1: Device summary Order code Marking Package Packaging STS9P2UH7 9L2U SO-8 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. SO-8 5 8 4 1 |
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