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STS10P3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS10P3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page June 2015 DocID025837 Rev 3 1/12 This is information on a product in full production. www.st.com STS10P3LLH6 P-channel - 30 V, 0.01 Ω typ., -12.5 A, STripFET™ H6 Power MOSFET in an SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STS10P3LLH6 -30 V 0.012 Ω -12.5 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Packages Packing STS10P3LLH6 10K3L SO-8 Tape and reel SO - 8 1 4 |
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