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STS10P3LLH6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STS10P3LLH6 Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 12 page Electrical characteristics STS10P3LLH6 6/12 DocID025837 Rev 3 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics For the P-channel Power MOSFET, current and voltage polarities are reversed |
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