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CLY38-00 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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CLY38-00 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page  CLY38 Semiconductor Group 3 of 10 Draft D, September 99 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 2.4 3.8 5.2 A Gate threshold voltage VDS = 3 V, ID = 160 mA -VGth 1.6 2.6 3.6 V Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V IDp3 - - 400 µA Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V -IGp3 - - 160 µA Drain current at pinch-off, high VDS VDS = 12 V, VGS = -4 V IDp12 - - 8000 µA Gate current at pinch-off, high VDS VDS = 12 V, VGS = -4 V -IGp12 - - 3200 µA Transconductance VDS = 3 V, ID = 720 mA gm 900 1100 - mS Thermal resistance junction to soldering point VDS = 9 V, ID = 720 mA, Ts = +25°C Rth JS - 3.8 - K/W |
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