QJD1210006

Silicon Carbide MOSFET Module

100 Amperes/1200 Volts

2

Preliminary

04/12 Rev. 6

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

QJD1210006

Units

Drain-Source Voltage (G-S Short)

VDDS

1200

Volts

Gate-Source Voltage

VGSS

-5 / +25

Volts

Drain Current (Continuous) at TC = 150°C

ID

100

Amperes

Drain Current (Pulsed)*

ID(pulse)

250

Amperes

Maximum Power Dissipation (TC = 25°C, Tj < 175°C)

PD

880

Watts

Junction Temperature

Tj

-40 to 200

°C

Storage Temperature

Tstg

-40 to 150

°C

Mounting Torque, M6 Main Terminal Screws

—

40

in-lb

Mounting Torque, M6 Mounting Screws

—

40

in-lb

Module Weight (Typical)

—

400

Grams

V Isolation Voltage

VRMS

3000

Volts

MOSFET Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

V(BR)DSS

ID = 50μA, VGS = 0

1200

—

—

Volts

Zero Gate Voltage Drain Current**

IDSS

VGS = 0, VDS = 1200V

—

0.18

1.6

mA

Zero Gate Voltage Drain Current**

IDSS

VGS = 0, VDS = 1200V, Tj = 175°C

—

0.40

12.0

mA

Gate Leakage Current

IGSS

VDS = 0, VGS = 20V

—

—

1.5

μA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 10mA

1.5

2.5

5.0

Volts

VDS = VGS, ID = 10mA, Tj = 175°C

1.0

1.7

5.0

Volts

Drain-Source On Resistance

RDS(on)

ID = 100A, VGS = 20V

—

15

25

mΩ

ID = 100A, VGS = 20V, Tj = 175°C

—

20

32

mΩ

Gate to Source Charge

Qgs

VDD = 800V, ID = 100A

—

140

—

nC

Gate to Drain Charge

Qgd

VDD = 800V, ID = 100A

—

220

—

nC

Total Gate Charge

QG

VCC = 800V, IC = 100A, VGS = -5/20V

—

500

—

nC

Body Diode Forward Voltage

VSD

IF = 50A, VGS = -5V

—

4.0

—

Volts

Input Capacitance

Ciss

—

10.2

—

nF

Output Capacitance

Coss

VGS = 0, VDS = 800V, f = 1MHz

—

1.0

—

nF

Reverse Transfer Capacitance

Crss

—

0.1

—

nF

Turn-on Delay Time

td(on)

VDD = 800V, ID = 100A,

—

—

TBD

ns

Rise Time

tr

VGS = 0/20V,

—

—

TBD

ns

Turn-off Delay Time

td(off)

RG = 10Ω,

—

—

TBD

µs

Fall Time

tf

RL = 856µH

—

—

TBD

ns

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

**Total module leakage includes MOSFET leakage plus reverse Schottky diode leakage.