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BTS555 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BTS555 Datasheet(HTML) 8 Page - Infineon Technologies AG |
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8 / 16 page  Data Sheet BTS555 Infineon Technologies AG 8 2003-Oct-01 Input circuit (ESD protection) IN ZD IN I V bb Rbb V Z,IN V bIN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). Current sense status output IS IS R IS I ZD IS V bb V bb R Z,IS V VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), RIS should be less than ilis M L bb K I V V / 5 ) ( − . Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). Short circuit detection Logic unit + Vbb OUT V ON Inductive and overvoltage output clamp + Vbb OUT PROFET V Z1 V ON D S IS V OUT V ZG VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -17 V typ. via VZG. With DS, VOUT is clamped to Vbb - VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT – potential the device will switch on, if diode DS is not used. Overvoltage protection of logic part + Vbb VOUT IN bb R Signal GND Logic PROFET V Z,IS RIS IN R IS V Z,IN RV V Z,VIS Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. |
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