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Q67060-S6204-A2 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67060-S6204-A2 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 15 page PROFET® BTS 432 I2 Infineon Technologies AG Page 1 of 15 1999-02-19 Smart Highside Power Switch Features • Load dump and reverse battery protection1) • Clamp of negative voltage at output • Short-circuit protection • Current limitation • Thermal shutdown • Diagnostic feedback • Open load detection in OFF-state • CMOS compatible input • Electrostatic discharge (ESD) protection • Loss of ground and loss of Vbb protection2) • Overvoltage protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protection functions. + Vbb IN ST Signal GND ESD PROFET ® OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 2 4 1 3 5 Load GND Load V Logic Overvoltage protection R bb 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads Product Summary VLoad dump 80 V Vbb-VOUT Avalanche Clamp 58 V Vbb (operation) 4.5 ... 42 V Vbb (reverse) -32 V RON 38 m Ω IL(SCp) 42 A IL(SCr) 33 A IL(ISO) 11 A 1 5 SMD 5 Standard |
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