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STPS2170AF Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS2170AF Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS2170 2/8 DocID027019 Rev1 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.04 x IF 2 (RMS) Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V VRRM Repetitive peak reverse voltage, Tj = -40 °C 160 V IF(RMS) Forward rms current 15 A IF(AV) Average forward current, δ = 0.5, square wave SMAflat, T L = 145 °C 2A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 70 A PARM (1) Repetitive peak avalanche power, square wave tp = 10 µs, Tj = 125 °C 165 W Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature(2) -40 to +175 °C 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. 2. condition to avoid thermal runaway for a diode on its own heatsink dP tot dTj --------------- 1 Rth j a – () -------------------------- < Table 3. Thermal parameters Symbol Parameter Value Unit Rth(j-l) Junction to lead, SMAflat 20 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 2.8 µA Tj = 125 °C 0.5 2.8 mA VF (2) Forward voltage drop Tj = 25 °C IF = 2 A 0.82 V Tj = 125 °C 0.62 0.67 Tj = 25 °C IF = 4 A 0.89 Tj = 125 °C 0.70 0.75 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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