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BTS426L1E3043 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS426L1E3043 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 14 page PROFET® BTS426L1 Semiconductor Group 1 of 14 2003-Oct-01 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of V bb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Charge pump Level shifter Temperature sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 2 4 1 3 5 Load GND Load V Logic Overvoltage protection GND R O Open load detection Short to Vbb 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 43 V Operating voltage Vbb(on) 5.0 ... 34 V On-state resistance RON 60 m Ω Load current (ISO) IL(ISO) 7.0 A Current limitation IL(SCr) 16 A TO-220AB/5 5 Standard 1 5 Straight leads 1 5 SMD |
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