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BTS412B2E3062A Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BTS412B2E3062A
Description  Smart Highside Power Switch
Download  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BTS412B2E3062A Datasheet(HTML) 8 Page - Infineon Technologies AG

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BTS 412B2
Semiconductor Group
8
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E AS
bb
L
R
ELoad
L
RL
{
Z
L
Energy stored in load inductance:
EL = 1/2·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=
∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
IL· L
2·RL
·
(Vbb + |VOUT(CL)|)· ln (1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
L [mH]
1
10
100
1000
10000
12
3
4
5
6
IL [A]
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
0.01
0.1
1
10
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]


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