Electronic Components Datasheet Search |
|
BTS412B2E3062A Datasheet(PDF) 8 Page - Infineon Technologies AG |
|
BTS412B2E3062A Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 14 page BTS 412B2 Semiconductor Group 8 Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb 1 2 4 3 5 V bb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb = E E E E AS bb L R ELoad L RL { Z L Energy stored in load inductance: EL = 1/2·L·I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L 2·RL · (Vbb + |VOUT(CL)|)· ln (1+ IL·RL |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] 1 10 100 1000 10000 12 3 4 5 6 IL [A] Typ. transient thermal impedance chip case ZthJC = f(tp, D), D=tp/T ZthJC [K/W] 0.01 0.1 1 10 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 0 0.01 0.02 0.05 0.1 0.2 0.5 D= tp [s] |
Similar Part No. - BTS412B2E3062A |
|
Similar Description - BTS412B2E3062A |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |