STI300N4F6 datasheet(7/13 Pages) STMICROELECTRONICS

Part #	STI300N4F6

Description	N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I짼PAK package

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STI300N4F6

Electrical characteristics

Doc ID 18062 Rev 2

7/13

Figure 8.

Capacitance variations

Figure 9.

Drain-source diode forward

characteristics

Figure 10.

Normalized gate threshold voltage

vs temperature

Figure 11.

Normalized on-resistance vs

temperature

Figure 12.

Normalized BVDSS vs temperature

C

6100

4100

2100

100

0

20

VDS(V)

(pF)

10

30

Ciss

Coss

Crss

40

8100

10100

12100

14100

16100

AM15611v1

VSD

0

40

ISD(A)

(V)

20

60

80

0.3

0.35

0.4

0.45

0.5

0.55

TJ=-55°C

TJ=25°C

TJ=175°C

0.6

0.65

0.7

0.75

0.8

AM15612v1

VGS(th)

0.6

0.4

0.2

0

-75

-25

TJ(°C)

(norm)

-50

0.8

0

1

ID=250 µA

1.2

75

50

100

25

125150

AM15613v1

RDS(on)

0.6

0.4

0

TJ(°C)

(norm)

0.2

-75

0

-50

75

-25

50

100

25

125

0.8

150

1

1.2

1.4

1.6

1.8

VGS=10V

ID=80A

AM15614v1

VDS

-75

0

TJ(°C)

(norm)

-50

75

-25

50

100

0.92

0.94

0.96

0.98

1

1.02

ID = 1mA

25

125

1.04

1.06

150

1.08

1.1

AM15615v1

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