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CM110YE4-12F Datasheet(PDF) 3 Page - Powerex Power Semiconductors |
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CM110YE4-12F Datasheet(HTML) 3 Page - Powerex Power Semiconductors |
3 / 5 page 3 CM110YE4-12F TLI-Series (Three Level Inverter) IGBT 110 Amperes/600 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 Rev. 0 Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Inverter Part Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate-Emitter Threshold Voltage VGE(th) IC = 11mA, VCE = 10V 5 6 7 Volts Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 μA Collector-Emitter Saturation Voltage VCE(sat) IC = 110A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts IC = 110A, VGE = 15V, Tj = 125°C – 1.6 – Volts Input Capacitance Cies – – 30 nF Output Capacitance Coes VCE = 10V, VGE = 0V – – 2 nF Reverse Transfer Capacitance Cres – – 1.1 nF Total Gate Charge QG VCC = 300V, IC = 110A, VGE = 15V – 680 – nC Turn-on Delay Time td(on) VCC = 300V, IC = 110A, – – 450 ns Turn-on Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Turn-off Delay Time td(off) RG = 17Ω, – – 800 ns Turn-off Fall Time tf Inductive Load Switching Operation, – – 300 ns Reverse Recovery Time trr*1 IE = 110A – – 200 ns Reverse Recovery Charge Qrr*1 – 0.55 – μC Emitter-Collector Voltage VEC*1 IE = 110A, VGE = 0V – – 3.1 Volts External Gate Resistance RG 17 – 57 Ω Clamp Diode Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Reverse Current IRRM VR = VRRM – – 1 mA Forward Voltage Drop VFM IF = 110A – – 2.6 Volts Reverse Recovery Time trr IF = 110A, VCC = 300V, – – 200 ns Reverse Recovery Charge Qrr VGE1 = VGE2 = 15V, RG = 17Ω, – 0.7 – μC Inductive Load Switching Operation Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*4 Rth(j-c')Q Inverter IGBT – – 0.33 °C/W Thermal Resistance, Junction to Case*4 Rth(j-c')D Inverter FWDi – – 0.71 °C/W Thermal Resistance, Junction to Case*4 Rth(c-f)D Clamp Diode Part – – 0.38 °C/W Contact Thermal Resistance*4*5 Rth(c-f) Thermal Grease Applied (per 1 Module) – 0.096 – °C/W *4 TC measured point is just under the chips. If using this value, Rth(f-a) should be measured just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. |
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