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BSV236SP Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSV236SP Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page 2001-12-21 Page 6 Preliminary data BSV 236SP 9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = -1.5 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 80 100 120 140 160 180 200 m Ω 240 typ. 98% 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = -8 µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1 V 1.4 2% typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 V 20 - VDS 1 10 2 10 3 10 pF Crss Coss Ciss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -2 -10 -1 -10 0 -10 1 -10 A BSV 236SP T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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