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BSS159N Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSS159N Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  BSS159N Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 350 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA 60 - - V Gate threshold voltage V GS(th) V DS=3 V, I D=26 µA -3.5 -2.8 -2.4 Drain-source leakage current I D (off) V DS=60 V, V GS=-10 V, T j=25 °C - - 0.1 µA V DS=60 V, V GS=-10 V, T j=125 °C -- 10 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Saturated drain current I DSS V GS=0 V, V DS=10 V 130 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.07 A - 3.9 8 Ω V GS=10 V, I D=0.23 A - 1.8 3.5 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.16 A 0.1 0.19 - S Values Rev. 1.0 page 2 2004-02-19 |
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