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BSS80B Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSS80B Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  BSS80, BSS82 1 Nov-30-2001 PNP Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN) 1 2 3 VPS05161 Type Marking Pin Configuration Package BSS80B BSS80C BSS82B BSS82C CHs CJs CLs CMs 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BSS80 BSS82 Unit Collector-emitter voltage VCEO 40 60 V Collector-base voltage VCBO 60 V Emitter-base voltage VEBO 5 DC collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 220 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Similar Part No. - BSS80B |
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Similar Description - BSS80B |
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