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STF10LN80K5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STF10LN80K5 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STF10LN80K5 Electrical characteristics DocID027751 Rev 3 5/14 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 8 A ISDM (1) Source-drain current (pulsed) - 32 A VSD (2) Forward on voltage ISD = 8 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, see Figure 17: "Test circuit for inductive load switching and diode recovery times") - 350 ns Qrr Reverse recovery charge - 3.9 µC IRRM Reverse recovery current - 22.5 A trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C see Figure 17: "Test circuit for inductive load switching and diode recovery times" - 505 ns Qrr Reverse recovery charge - 5 µC IRRM Reverse recovery current - 20 A Notes: (1) Pulse width limited by safe operating area (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max Unit V (BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0A 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. |
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