STF10LN80K5

Electrical characteristics

DocID027751 Rev 3

5/14

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

8

A

(1)

Source-drain current

(pulsed)

-

32

A

VSD

(2)

Forward on voltage

-

1.5

V

Reverse recovery time

"Test circuit for inductive load

switching and diode recovery

times")

-

350

ns

Reverse recovery charge

-

3.9

µC

Reverse recovery current

-

22.5

A

Reverse recovery time

see Figure 17: "Test circuit

for inductive load switching

and diode recovery times"

-

505

ns

Reverse recovery charge

-

5

µC

Reverse recovery current

-

20

A

Notes:

(1)

Pulse width limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection,thus eliminating the need for additional external componentry.