STB35N60DM2 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STB35N60DM2

Description	Extremely low gate charge and input capacitance

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STB35N60DM2

Electrical characteristics

DocID028331 Rev 1

5/15

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 300 V, ID = 14 A RG = 4.7 Ω,

VGS = 10 V (see Figure 14: "Test circuit for

resistive load switching times" and Figure 19:

"Switching time waveform")

-

21.2

-

ns

tr

Rise time

-

17

-

td(off)

Turn-off

delay time

-

68

-

tf

Fall time

-

10.7

-

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

-

28

A

ISDM

(1)

Source-drain

current

(pulsed)

-

112

A

VSD

(2)

Forward on

voltage

VGS = 0 V, ISD = 28 A

-

1.6

V

trr

Reverse

recovery time

ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 16: "Test circuit for inductive

load switching and diode recovery times")

-

120

ns

Qrr

Reverse

recovery

charge

-

572

nC

IRRM

Reverse

recovery

current

-

10.2

A

trr

Reverse

recovery time

ISD = 28 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

-

215

ns

Qrr

Reverse

recovery

charge

-

1.89

µC

IRRM

Reverse

recovery

current

-

17.7

A

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±250 µA, ID = 0 A

±30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

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