STB35N60DM2 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STB35N60DM2

Description	Extremely low gate charge and input capacitance

Download	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 15 page

Electrical characteristics

STB35N60DM2

4/15

DocID028331 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

10

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 14 A

0.094

0.11

Ω

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input

capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

-

2400

-

pF

Coss

Output

capacitance

-

110

-

Crss

Reverse transfer

capacitance

-

2.8

-

Coss eq.

(1)

Equivalent

output

capacitance

VDS = 0 to 480 V, VGS = 0 V

-

190

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A

-

4.3

-

Ω

Qg

Total gate

charge

VDD = 480 V, ID = 28 A, VGS = 10 V (see

Figure 15: "Test circuit for gate charge

behavior")

-

54

-

nC

Qgs

Gate-source

charge

-

14.6

-

Qgd

Gate-drain

charge

-

24.2

-

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Similar Part No. - STB35N60DM2

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STB35N65M5	1Mb / 22P	N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247
Inchange Semiconductor ...	STB35N65M5	316Kb / 2P	isc N-Channel MOSFET Transistor

More results

Similar Description - STB35N60DM2

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	STB28N60DM2	1Mb / 20P	Extremely low gate charge and input capacitance
	STB45N40DM2AG	914Kb / 15P	Extremely low gate charge and input capacitance
	STB37N60DM2AG	915Kb / 15P	Extremely low gate charge and input capacitance
	STP45N40DM2AG	733Kb / 13P	Extremely low gate charge and input capacitance
	STB27NM60ND	940Kb / 19P	Low input capacitance and gate charge
	STY100NM60N	815Kb / 13P	Low input capacitance and gate charge November 2012 Rev 2
	F21NM60ND	559Kb / 18P	Low input capacitance and gate charge
	STB43N65M5	561Kb / 16P	Low gate charge and input capacitance
	STL15N65M5	1Mb / 16P	Low gate charge and input capacitance December 2016 Rev 2
	STL38N65M5	1Mb / 17P	Low input capacitance and gate charge

More results

STB35N60DM2 Datasheet(PDF) 4 Page - STMicroelectronics

STB35N60DM2 Datasheet(HTML) 4 Page - STMicroelectronics

Similar Part No. - STB35N60DM2

Similar Description - STB35N60DM2

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL