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BSO303SP Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSO303SP Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2002-01-08 Page 1 Preliminary data BSO303SP OptiMOS -P Small-Signal-Transistor Product Summary VDS -30 V RDS(on) 21 m Ω ID -8.9 A Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated SIS00062 G 45 D S 36 D S 27 D S 18 Top View D Type Package Ordering Code BSO303SP SO 8 Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -8.9 -7.1 A Pulsed drain current TA=25°C ID puls -35.6 Avalanche energy, single pulse ID=-8.9 A , VDD=-25V, RGS=25Ω EAS 97 mJ Reverse diode dv/dt IS=-8.9A, VDS=-24V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 2.35 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 |
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