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BSO211P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BSO211P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 2002-01-22 Page 2 Preliminary data BSO211P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 50 K/W SMD version, device on PCB: @ min. footprint, t<10s @ 6 cm2 cooling area 1) RthJA - - - - 110 62.5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -20 - - V Gate threshold voltage, VGS = VDS ID=-25µA VGS(th) -0.6 -0.9 -1.2 Zero gate voltage drain current VDS=-20V, VGS=0, Tj=25°C VDS=-20V, VGS=0, Tj=150°C IDSS - - -0.1 -10 -1 -100 µA Gate-source leakage current VGS=-12V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-2.5V, ID=-3.7A RDS(on) - 86 110 m Ω Drain-source on-state resistance VGS=-4.5V, ID=-4.7A RDS(on) - 53 67 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. |
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