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BFY450 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BFY450 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 5 page BFY450 Semiconductor Group 3 of 5 Draft B, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 90mA, VCE = 3 V, f = 1.0 GHz IC = 90mA, VCE = 3 V, f = 2.0 GHz fT 18 - 22 17 - - GHz Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz CCB - 0.42 0.9 pF Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz CCE - 1.27 2.6 pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB -2.0 3 pF Noise Figure IC = 10 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt F - 1.25 2.0 dB Insertion power gain IC = 50 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 Ω |S21e| 2 8.0 12 - dB Power gain IC = 50 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Gma 1.) - 16.0 - dB 1dB Compression point IC = 50 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt P-1dB -19 - dBm Notes.: 1) G S S kk ma =− − 21 12 1 2 () , G S S ms = 21 12 |
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