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BFR949T Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BFR949T Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 7 page BFR949T Oct-24-2001 3 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 6 V, f = 1 GHz fT 7 9 - GHz Collector-base capacitance VCB = 10 V, f = 1MHz Ccb - 0.31 0.4 pF Collector-emitter capacitance VCE = 10 V, f = 1MHz Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1MHz Ceb - 0.6 - Noise figure IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz F - - 1 1.5 2.5 - dB Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 20 - Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 14 - Transducer gain IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz |S21e|2 13 - 16 11 - - 1Gms = |S21 / S12| 2Gma = |S21 / S12| (k-(k2-1)1/2) |
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