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LMK03806 Datasheet(PDF) 11 Page - Texas Instruments |
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LMK03806 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 66 page LMK03806 www.ti.com SNAS522I – SEPTEMBER 2011 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) 3.15 V ≤ VCC ≤ 3.45 V, -40 °C ≤ TA ≤ 85 °C, Junction Temperature TJ ≤ 125 °C. Typical values represent most likely parametric norms at VCC = 3.3 V, TA = 25 °C, at Recommended Operating Conditions at the time of product characterization and are not ensured. (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PLL PHASE DETECTOR AND CHARGE PUMP SPECIFICATIONS fPD Phase detector frequency 155 MHz VCPout=VCC/2, PLL_CP_GAIN = 0 100 µA VCPout=VCC/2, PLL_CP_GAIN = 1 400 µA ICPoutSOURCE PLL charge pump source current VCPout=VCC/2, PLL_CP_GAIN = 2 1600 µA VCPout=VCC/2, PLL_CP_GAIN = 3 3200 µA VCPout=VCC/2, PLL_CP_GAIN = 0 –100 µA VCPout=VCC/2, PLL_CP_GAIN = 1 –400 µA ICPoutSINK PLL charge pump sink current VCPout=VCC/2, PLL_CP_GAIN = 2 –1600 µA VCPout=VCC/2, PLL_CP_GAIN = 3 –3200 µA ICPout%MIS Charge pump sink/source mismatch VCPout=VCC/2, TA = 25 °C 3% 10% Magnitude of charge pump current vs. 0.5 V < VCPout < VCC – 0.5 V ICPoutVTUNE 4% charge pump voltage variation TA = 25 °C Charge pump current vs. temperature ICPout%TEMP 4% variation ICPoutTRI Charge pump leakage 0.5 V < VCPout < VCC – 0.5 V 10 nA PLL 1/f noise at 10 kHz offset(12). PLL_CP_GAIN = 400 µA –118 dBc/Hz PN10kHz Normalized to PLL_CP_GAIN = 3200 µA –121 dBc/Hz 1-GHz output frequency PLL_CP_GAIN = 400 µA –222.5 dBc/Hz PN1Hz Normalized phase noise contribution(13) PLL_CP_GAIN = 3200 µA –227 dBc/Hz 1-kHz Offset –93 dBc/Hz PLL phase noise (Assumes a very wide bandwidth, 10 kHz –103 dBc/Hz L(f) noiseless crystal, 2500-MHz output 100-kHz Offset –116 dBc/Hz frequency, and 25-MHz phase detector frequency) 1-MHz Offset –116 dBc/Hz INTERNAL VCO SPECIFICATIONS fVCO VCO tuning range 2370 2600 MHz Fine tuning sensitivity fVCO at low end 16 (The range displayed in the typical column indicates the lower sensitivity is KVCO MHz/V typical at the lower end of the tuning fVCO at high end 21 range, and the higher tuning sensitivity is typical at the higher end of the tuning range). (12) A specification in modeling PLL in-band phase noise is the 1/f flicker noise, LPLL_flicker(f), which is dominant close to the carrier. Flicker noise has a 10 dB/decade slope. PN10kHz is normalized to a 10 kHz offset and a 1 GHz carrier frequency. PN10kHz = LPLL_flicker(10 kHz) - 20log(Fout / 1 GHz), where LPLL_flicker(f) is the single side band phase noise of only the flicker noise's contribution to total noise, L(f). To measure LPLL_flicker(f) it is important to be on the 10 dB/decade slope close to the carrier. A high compare frequency and a clean crystal are important to isolating this noise source from the total phase noise, L(f). LPLL_flicker(f) can be masked by the reference oscillator performance if a low power or noisy source is used. The total PLL in-band phase noise performance is the sum of LPLL_flicker(f) and LPLL_flat(f). (13) A specification modeling PLL in-band phase noise. The normalized phase noise contribution of the PLL, LPLL_flat(f), is defined as: PN1HZ=LPLL_flat(f) - 20log(N) - 10log(fPD). LPLL_flat(f) is the single side band phase noise measured at an offset frequency, f, in a 1 Hz bandwidth and fPD is the phase detector frequency of the synthesizer. LPLL_flat(f) contributes to the total noise, L(f). Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: LMK03806 |
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