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BCR35PN Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. BCR35PN
Description  NPN/PNP Silicon Digital Transistor Array
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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BCR35PN
Nov-29-2001
1
NPN/PNP Silicon Digital Transistor Array
 Switching circuit, inverter, interface circuit,
driver circuit
 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
 Built in bias resistor (R1=10k, R2=47k)
Tape loading orientation
VPS05604
6
3
1
5
4
2
EHA07193
12 3
4
5
6
W1s
Direction of Unreeling
Top View
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07176
6
54
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R 2
R1
R 2
TR1
TR2
Type
Marking
Pin Configuration
Package
BCR35PN
WUs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
50
V
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
6
Input on Voltage
Vi(on)
20
DC collector current
IC
100
mA
Total power dissipation, TS = 115 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
 140
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance




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