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BCM846S Datasheet(PDF) 2 Page - Infineon Technologies AG

Part No. BCM846S
Description  NPN Silicon AF Transistor Array
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 2 page
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Aug-30-2002
2
BCM846S
Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 A
V(BR)CEO 65
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 A
V(BR)CBO 80
-
-
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 A
V(BR)CES 80
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 A
V(BR)EBO
6
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0 A
VCB = 30 V, IE = 0 A, TA = 150 °C
ICBO
-
-
-
-
15
5
nA
DC current gain-1)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
hFE
-
200
250
290
-
450
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
300
650
mV
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
mV
mV
Base-emitter voltage-1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
750
820
Matching
IB = 1 µA, VCE1 = VCE2 = 1.0V
IB = 100 µA, VCE1 = VCE2 = 1.0V
IC
-10
-10
-
-
10
10
%
1Puls test: t < 300µs; D < 2%




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