EM341-RTR datasheet(7/237 Pages) SILABS

Part #	EM341-RTR

Description	High-Performance, Integrated RF4CE System-on-Chip

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Manufacturer	SILABS [Silicon Laboratories]

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EM341

Rev 1.0

7

2. Electrical Specifications

2.1. Absolute Maximum Ratings

Table 2.1 lists the absolute maximum ratings for the EM341.

2.2. Recommended Operating Conditions

Table 2.2 lists the rated operating conditions of the EM341.

Table 2.1. Absolute Maximum Ratings

Parameter

Test Condition

Min

Max

Unit

Regulator input voltage (VDD_PADS)

–0.3

+3.6

V

Analog, Memory and Core voltage (VDD_24MHZ,

VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA,

VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE)

–0.3

+2.0

V

Voltage on RF_P,N; RF_TX_ALT_P,N

–0.3

+3.6

V

RF Input Power



(for max level for correct packet reception see

Table 2.7)

RX signal into a lossless

balun

—

+15

dBm

Voltage on any GPIO (PA[7:0], PB[7:0], PC[7:0]),

SWCLK, nRESET, VREG_OUT

–0.3

VDD_PADS

+0.3

V

Voltage on any GPIO pin (PA4, PA5, PB5, PB6, PB7,

PC1), when used as an input to the general purpose

ADC

–0.3

2.0

V

Voltage on OSCA, OSCB, NC

–0.3 VDD_PADSA

+0.3

V

Storage temperature

–40

+140

°C

Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

Table 2.2. Operating Conditions

Parameter

Test Condition

Min

Typ

Max

Unit

Regulator input voltage (VDD_PADS)

2.1

—

3.6

V

Analog and memory input voltage

(VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF,

VDD_PADSA, VDD_MEM, VDD_PRE,

VDD_SYNTH)

1.7

1.8

1.9

V

Core input voltage when supplied from internal

regulator (VDD_CORE)

1.18

1.25

1.32

V

Core input voltage when supplied externally

(VDD_CORE)

1.18

—

1.9

V

Operating temperature range, TA

–40

—

+85

°C

Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

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