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PAM8008 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # PAM8008
Description  3W STEREO CLASS-D with DC VOLUME, POWER LIMIT and ANTI-SATURATION
Download  14 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

PAM8008 Datasheet(HTML) 4 Page - Diodes Incorporated

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PAM8008
Document number: DSxxxxx Rev. 1 - 0
4 of 14
www.diodes.com
October 2012
© Diodes Incorporated
PAM8008
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = Maximum, RL = 8Ω, unless otherwise specified.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Supply Voltage Range
VDD
2.5
5.5
V
Quiescent Current
IQ
No Load
8
mA
Output Offset Voltage
VOS
No Load
10
mV
Drain-Source On-State Resistance
RDS(ON)
IDS = 0.5A
P MOSFET
0.31
Ω
N MOSFET
0.21
Output Power
PO
THD+N = 1%
f = 1kHz
RL = 8Ω
1.4
W
RL = 4Ω
2.4
Total Harmonic Distortion Plus Noise
THD+N
RL = 8Ω, PO = 0.85W, f = 1KHz
0.08
%
RL = 4Ω, PO = 1.75, f = 1KHz
0.08
Power Supply Ripple Rejection
PSRR
Input AC-GND, f = 1KHz, VPP = 200mV
70
dB
Channel Separation
CS
PO = 1W, f = 1KHz
-95
dB
Oscillator Frequency
fOSC
200
250
300
kHz
Efficiency
η
PO = 1.1W, f =1 kHz, RL = 8Ω
87
%
PO = 2.4W, f =1 kHz, RL = 4Ω
83
%
Noise
VN
Input AC-GND
A-Weighting
60
µV
No A-Weighting
80
Signal Noise Ratio
SNR
f = 20 - 20kHz, THD = 1%
95
dB
Turn-On Time
TON
VDD = 5V, CBYP = 1µF
1.2
S
Mute Current
IMUTE
MUTE = VDD
4
10
mA
Shutdown Current
ISD
VSD = 0V
1
µA
Logic Input High
VIH
1.4
V
Logic Input Low
VIL
0.6
Over Temperature Protection
OTP
150
°C
Over Temperature Hysteresis
OTH
40
°C


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