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D5V0L4A2LP3713 Datasheet(PDF) 2 Page - Diodes Incorporated |
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D5V0L4A2LP3713 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page D5V0L1B2LP3 Document number: DS35533 Rev. 8 - 2 2 of 6 www.diodes.com April 2015 © Diodes Incorporated D5V0L1B2LP3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 84 W 8/20µs, Per Fig. 1 Peak Pulse Current IPP 6 A 8/20µs, Per Fig. 1 ESD Protection – Contact Discharge VESD_Contact ±30 kV Standard IEC 61000-4-2 ESD Protection – Air Discharge VESD_Air ±30 kV Standard IEC 61000-4-2 Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) PD 250 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage VRWM — — 5 V — Channel Leakage Current (Note 6) IRM — 10 100 nA VRWM = 5V Clamping Voltage, Positive Transients VCL — 7.0 9.0 V IPP = 1A, tp = 8/20µS, Figure 1 — 8.7 10.7 IPP = 3A, tp = 8/20µS, Figure 1 — 10.5 12.0 IPP = 5A, tp = 8/20µS, Figure 1 — 11.5 14.0 IPP = 6A, tp = 8/20µS, Figure 1 Breakdown Voltage VBR 6 7 8 V IR = 1mA Differential Resistance RDIF — 0.2 — IR = 1A, tp = 8/20µS Channel Input Capacitance CT — 15 18 pF VR = 0V, f = 1MHz — 12.5 — VR = 2.5V, f = 1MHz Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 0 t, TIME (µs) Figure 1 Pulse Waveform 20 40 60 100 50 0 Peak Value Ipp Half Value I /2 pp 8x20 Waveform as defined by R.E.A. 10 11 12 13 14 15 16 17 18 0 1 2 3 4 5 6 V , REVERSE VOLTAGE (V) Figure 2 Typical Total Capacitance vs. Reverse Voltage R f = 1MHz |
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