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LM431BCMX Datasheet(PDF) 4 Page - Texas Instruments |
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LM431BCMX Datasheet(HTML) 4 Page - Texas Instruments |
4 / 32 page LM431 SNVS020H – MAY 2000 – REVISED JANUARY 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Cathode voltage 37 V Reference voltage –0.5 V Continuous cathode current –10 150 mA Reference input current 10 mA TO-92 package 0.78 W Internal power SOIC package 0.81 W dissipation(3)(4) SOT-23 package 0.28 W Industrial (LM431xI) –40 85 °C Operating temperature Commercial (LM431xC) 0 70 °C Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications. (3) TJ Max = 150°C. (4) Ratings apply to ambient temperature at 25°C. Above this temperature, derate the TO-92 at 6.2 mW/°C, the SOIC at 6.5 mW/°C, the SOT-23 at 2.2 mW/°C. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Cathode voltage VREF 37 V Cathode current 1 100 mA 6.4 Thermal Information LM431 THERMAL METRIC(1) D (SOIC) DBZ (SOT-23) LP (TO-92) UNIT 8 PINS 3 PINS 3 PINS RθJA Junction-to-ambient thermal resistance 126.9 267.7 162.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 72.2 138.3 85.8 °C/W RθJB Junction-to-board thermal resistance 67.5 61 — °C/W ψJT Junction-to-top characterization parameter 21.1 21.5 29.4 °C/W ψJB Junction-to-board characterization parameter 67 60.1 141.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — — °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 4 Submit Documentation Feedback Copyright © 2000–2016, Texas Instruments Incorporated Product Folder Links: LM431 |
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