INA826

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SBOS562E – AUGUST 2011 – REVISED APRIL 2013

ELECTRICAL CHARACTERISTICS (continued)

INA826

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

REFERENCE INPUT

Input impedance

100

k

Ω

Voltage range

(V–)

(V+)

V

Gain to output

1

V/V

Reference gain error

0.01

%

POWER SUPPLY

Single

+2.7

+36

V

Power-supply voltage

Dual

±1.35

±18

V

200

250

µA

Quiescent current

250

300

µA

TEMPERATURE RANGE

Specified

–40

+125

°C

Operating

–50

+150

°C

THERMAL INFORMATION

INA826

INA826

INA826

D (SOIC)

DGK (MSOP)

DRG (DFN)

UNITS

8 PINS

8 PINS

8 PINS

Junction-to-ambient thermal resistance

141.4

215.4

50.9

Junction-to-case (top) thermal resistance

75.4

66.3

60.0

Junction-to-board thermal resistance

59.6

97.8

25.4

°C/W

Junction-to-top characterization parameter

27.4

10.5

1.2

Junction-to-board characterization parameter

59.1

96.1

25.5

Junction-to-case (bottom) thermal resistance

N/A

N/A

7.2

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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