© 2009 Fairchild Semiconductor Corporation

www.fairchildsemi.com

DFB2005 - DFB20100 Rev. 1.2.2

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. Single-phase, half-wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

2. Device mounted on 4 inch x 5 inch x 0.25 inch Al-plate heat sink.

Electrical Characteristics

Note:

3. Measured at 1 MHz and applied reverse bias of 4.0 V DC.

Symbol

Parameter

Value

Units

DFB

2005

DFB

2010

DFB

2020

DFB

2040

DFB

2060

DFB

2080

DFB

20100

Maximum

Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

V

Maximum

Average Forward Rectified Current

20

A

Peak Forward Surge Current

(8.3 ms Single Half-wave)

250

A

4.75

°C/W

Operating Temperature Range

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Symbol

Parameter

Test condition

Value

Unit

Maximum

10 A

1.0

V

Instantaneous Forward Voltage

20 A

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage

10

μA

500

Rating for Fusing (t < 8.3 ms)

259

140

pF