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DFB2010 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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DFB2010 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com DFB2005 - DFB20100 Rev. 1.2.2 2 Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. Single-phase, half-wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 2. Device mounted on 4 inch x 5 inch x 0.25 inch Al-plate heat sink. Electrical Characteristics Values are at TA = 25°C unless otherwise specified. Note: 3. Measured at 1 MHz and applied reverse bias of 4.0 V DC. Symbol Parameter Value Units DFB 2005 DFB 2010 DFB 2020 DFB 2040 DFB 2060 DFB 2080 DFB 20100 VRRM Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V VRMS Maximum RMS Voltage 35 70 140 280 420 560 700 V VDC Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V I(AV) Maximum Average Forward Rectified Current 20 A IFSM Peak Forward Surge Current (8.3 ms Single Half-wave) 250 A RθJC Typical Thermal Resistance(2) 4.75 °C/W TJ Operating Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Test condition Value Unit VF Maximum 10 A 1.0 V Instantaneous Forward Voltage 20 A 1.1 IR Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25°C 10 μA TA = 125°C 500 I2t Rating for Fusing (t < 8.3 ms) 259 A2s CJ Typical Junction Capacitance per Leg(3) 140 pF |
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