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R82EC1100-5 Datasheet(PDF) 3 Page - Kemet Corporation

Part # R82EC1100-5
Description  METALL IZED POLYE STER FILM CAPACITOR D.C. MUL TIPURPOSE APPLICATIONS
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Manufacturer  KEMET [Kemet Corporation]
Direct Link  http://www.kemet.com
Logo KEMET - Kemet Corporation

R82EC1100-5 Datasheet(HTML) 3 Page - Kemet Corporation

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09/2008
28
R82
MKT Series
MeTAllIZeD POlyeSTeR FIlM CAPACITOR
D.C. MulTIPuRPOSe APPlICATIONS
p = 5 mm
PRoDUCT CoDe:
R82
eleCTRICAl ChARACTeRISTICS
Rated voltage (V
R):
50 Vdc
63 Vdc 100 Vdc
250 Vdc 400 Vdc
Rated temperature (T
R):
+85°C
Temperature derated voltage:
for temperatures between +85°C and +105°C a decreasing
factor of 1.25% per degree °C on the rated voltage V
R (d.c.
and a.c.) has to be applied.
Capacitance range:
1000pF to 4.7µF
Capacitance values:
e6 series (IeC 60063 Norm).
Capacitance tolerances (measured at 1 khz):
±5% (J); ±10% (K); ±20% (M).
Total self-inductance (l): ≈7nH
max 1 nH per 1 mm lead and capacitor length.
Dissipation factor (DF):
tgδ 10-4 at +25°C ±5°C
kHz
C
0.1µF C > 0.1µF
1
10
100
80
120
250
80
120
Insulation resistance:
Test conditions
Temperature:
+25°C±5°C
Voltage charge time:
1 min
Voltage charge:
50 Vdc for V
R <100 Vdc
100 Vdc for V
R ≥100 Vdc
Performance
For V
R ≤100 Vdc
≥ 15000 MΩ for C ≤ 0.33µF
≥ 5000 s
for C > 0.33µF and ≤1µF
≥ 1000 s
for C > 1µF
For V
R >100 Vdc
≥ 30000 MΩ
*Typical value
Test voltage between terminations:
1.4xV
R applied for 2 s at +25°C±5°C.
TeST MeThOD AND PeRFORMANCe
Damp heat, steady state:
Test conditions
Temperature:
+40°C±2°C
Relative humidity (RH):
93% ±2%
Test duration:
56 days
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ):
≤ 50x10-4 at 1kHz
Insulation resistance:
≥ 50% of initial limit.
endurance:
Test conditions
Temperature:
+105°C ±2°C
Test duration:
2000 h
Voltage applied:
1.25xV
C
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ): ≤ 30x10-4 at 10kHz for C≤1µF
≤ 20x10-4 at 1kHz
for C>1µF
Insulation resistance:
≥50% of initial limit.
Resistance to soldering heat:
Test conditions
Solder bath temperature:
+260°C±5°C
Dipping time (with heat screen):10 s ±1 s
Performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ):
≤ 30x10-4 at 10kHz for C≤ 1µF
≤ 20x10-4 at 1kHz for C> 1µF
Insulation resistance:
≥ initial limit.
long term stability (after two years):
Storage: standard environmental conditions (see page 12).
Performance
Capacitance change |∆C/C|: ≤ 3% for C≤ 0.1µF
≤ 2% for C> 0.1µF
RelIABIlITy:
Reference MIL HDB 217
Application conditions:
Temperature:
+40°C±2°C
Voltage:
0.5xV
R
Failure rate:
≤ 1 FIT
(1 FIT = 1x10-9 failures/components x h)
Failure criteria:
(according to DIN 44122)
Short or open circuit
Capacitance change |∆C/C|: > 10%
DF change (∆tgδ):
> 2 x initial limit.
Insulation resistance:
< 0.005 x initial limit.


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