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DMP10H400SEQ-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP10H400SEQ-13
Description  100V P-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP10H400SEQ-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMP10H400SEQ
Document Number DS38396 Rev. 2 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMP10H400SEQ
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS=-10V, ID=-5.0A
V
GS=-4.5V, ID=-5.0A
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D=-250μA
I
D=-1mA
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS=0V, TJ=-55℃
V
GS=0V, TJ=25℃
V
GS=0V, TJ=85℃
V
GS=0V, TJ=125℃
V
GS=0V, TJ=150℃
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
V
DS=-60V, ID=-5A
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(MAX)=150℃
T
C=25℃
Single Pulse
DUT on 1*MRP board
V
GS= -10V
R
DS(ON) Limited
DC
P
W=10s
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100μs


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