1N5819HW1

Document number: DS37090 Rev. 4 - 2

2 of 5

www.diodes.com

October 2015

© Diodes Incorporated

1N5819HW1

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

40

V

RMS Reverse Voltage

28

V

Average Rectified Output Current

1

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Ambient (Note 5)

135

°C/W

Typical Thermal Resistance, Junction to Case (Note 5)

20

°C/W

Typical Thermal Resistance, Junction to Ambient (Note 6)

75

°C/W

Typical Thermal Resistance, Junction to Case (Note 6)

12

°C/W

Operating Junction Temperature Range

-55 to +125

°C

Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 6)

40

—

—

V

Forward Voltage Drop

—

—

—

—

—

—

0.44

0.36

0.64

0.63

0.35

0.51

—

0.75

—

V

Leakage Current (Note 7)

—

—

—

—

0.008

0.010

0.050

—

—

0.075

0.5

50

mA

Reverse Recovery Time

—

15

—

ns

Total Capacitance

—

30

—

pF

Notes:

5. Device mounted on 1 x MRP FR-4 PC board, 2oz.

6. Device mounted on 1inch sq. copper pad, 2oz.

7. Short duration pulse test used to minimize self-heating effect.