Electronic Components Datasheet Search |
|
DMNH3010LK3 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
DMNH3010LK3 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMNH3010LK3 Document number: DS38455 Rev. 2 - 2 2 of 7 www.diodes.com January 2016 © Diodes Incorporated DMNH3010LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TC = +25°C TC = +100°C ID 55 40 A Steady State TA = +25°C TA = +100°C ID 15 10.6 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 100 A Avalanche Current (Note 7) L = 0.8mH IAS 15 A Avalanche Energy (Note 7) L = 0.8mH EAS 75 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 2.0 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 74 °C/W t<10s 31 °C/W Total Power Dissipation (Note 6) PD 3.2 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 47 °C/W t<10s 21 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 2.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0 — 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 8 9.5 m Ω VGS = 10V, ID = 18A — 10 11.5 VGS = 4.5V, ID = 16A Diode Forward Voltage VSD — 0.75 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 2075 — pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 190 — Reverse Transfer Capacitance Crss — 138 — Gate Resistance Rg — 2.4 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 16.1 — nC VDS = 15V, ID = 18A Total Gate Charge (VGS = 10V) Qg — 37 — Gate-Source Charge Qgs — 6.1 — Gate-Drain Charge Qgd — 5.9 — Turn-On Delay Time tD(ON) — 4.5 — ns VDS = 15V, VGS = 10V, RL = 0.83Ω, RGEN = 3Ω Turn-On Rise Time tR — 19.6 — Turn-Off Delay Time tD(OFF) — 31 — Turn-Off Fall Time tF — 10.7 — Reverse Recovery Time tRR — 13.7 — ns IF=15A, di/dt=500A/µs Reverse Recovery Charge QRR — 18.3 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMNH3010LK3 |
|
Similar Description - DMNH3010LK3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |