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DMNH3010LK3 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMNH3010LK3
Description  175C N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH3010LK3 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMNH3010LK3
Document number: DS38455 Rev. 2 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMNH3010LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TC = +25°C
TC = +100°C
ID
55
40
A
Steady
State
TA = +25°C
TA = +100°C
ID
15
10.6
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
100
A
Avalanche Current (Note 7) L = 0.8mH
IAS
15
A
Avalanche Energy (Note 7) L = 0.8mH
EAS
75
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
2.0
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
74
°C/W
t<10s
31
°C/W
Total Power Dissipation (Note 6)
PD
3.2
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
47
°C/W
t<10s
21
°C/W
Thermal Resistance, Junction to Case (Note 6)
RθJC
2.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1.0
2.5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
8
9.5
m
Ω
VGS = 10V, ID = 18A
10
11.5
VGS = 4.5V, ID = 16A
Diode Forward Voltage
VSD
0.75
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
2075
pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
190
Reverse Transfer Capacitance
Crss
138
Gate Resistance
Rg
2.4
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
16.1
nC
VDS = 15V, ID = 18A
Total Gate Charge (VGS = 10V)
Qg
37
Gate-Source Charge
Qgs
6.1
Gate-Drain Charge
Qgd
5.9
Turn-On Delay Time
tD(ON)
4.5
ns
VDS = 15V, VGS = 10V,
RL = 0.83Ω, RGEN = 3Ω
Turn-On Rise Time
tR
19.6
Turn-Off Delay Time
tD(OFF)
31
Turn-Off Fall Time
tF
10.7
Reverse Recovery Time
tRR
13.7
ns
IF=15A, di/dt=500A/µs
Reverse Recovery Charge
QRR
18.3
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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