DMNH10H028SK3Q datasheet(4/7 Pages) DIODES

Part #	DMNH10H028SK3Q

Description	100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DMNH10H028SK3Q

Document number: DS38225 Rev. 1 - 2

4 of 7

www.diodes.com

October 2015

DMNH10H028SK3Q

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

0.05

-50

-25

0

25

50

75

100 125 150 175

T

J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

V

GS=10V, ID=10A

V

GS=10V, ID=20A

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

-50

-25

0

25

50

75

100 125 150 175

T

J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

I

D=250µA

I

D=1mA

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

V

GS=0V,

T

A=-55℃

V

GS=0V,

T

A=25℃

V

GS=0V,

T

A=85℃

V

GS=0V,

T

A=125℃

V

GS=0V,

T

A=150℃

V

GS=0V,

T

A=175℃

10

100

1000

10000

0

10

20

30

40

50

60

70

80

90 100

V

DS, DRAIN-SOURCE VOLTAGE(V)

Figure 10. Typical Junction Capacitance

f=1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

Qg (nC)

Figure 11. Gate Charge

V

DS=50V, ID=20A

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

T

J(Max)=175℃

T

C=25℃

Single Pulse

DUT on 1*MRP board

V

GS=20V

R

DS(ON) Limited

P

W=10s

DC

P

W=1s

P

W=100ms

P

W=10ms

P

W=1ms

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