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DMNH10H028SK3 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMNH10H028SK3
Description  100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H028SK3 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMNH10H028SK3
Document number: DS37383 Rev. 3 - 2
3 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMNH10H028SK3
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
1
2
3
4
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS=3.5V
V
GS=4.0V
V
GS=4.5V
V
GS=5.0V
V
GS=6.0V
V
GS=8.0V
V
GS=10.0V
0
5
10
15
20
25
30
2
2.5
3
3.5
4
4.5
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS=5V
-55
℃
25
℃
85
℃
175
℃
150
℃
125
℃
0.014
0.016
0.018
0.02
0.022
0.024
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS=10.0V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D=20A
0
0.01
0.02
0.03
0.04
0.05
0.06
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS=10V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS=10V, ID=10A
V
GS=10V, ID=20A


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