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DMN1250UFEL-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN1250UFEL-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN1250UFEL-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN1250UFEL
Document number: DS37787 Rev. 3 - 2
2 of 7
www.diodes.com
August 2015
© Diodes Incorporated
DMN1250UFEL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
12
V
Gate-Source Voltage
VGSS
8
V
Drain Current (Note 6) Continuous
TA = +25°C
TA = +70°C
ID
2.0
1.6
A
Pulsed Drain Current (Note 7)
IDM
10
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
0.66
W
Total Power Dissipation (Note 6)
PD
1.25
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
177
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
100
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. Device mounted on 1"x1", FR-4 PC board with minimum recommended pad layout, and test with single MOSFET.
6. Device mounted on 1"x1", FR-4 PC board with 2 oz. copper, and test with single MOSFET.
7. Repetitive Rating, pulse width limited by junction temperature, and test with single MOSFET.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
12
V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 12V, VGS = 0V
Gate-Body Leakage Current
IGSS
100
nA
VDS = 0V, VGS = 8V
Gate Threshold Voltage
VGS(TH)
0.4
1
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
280
450
m
VGS = 4.5V, ID = 0.2A

360
550
m
VGS = 2.5V, ID = 0.1A
Forward Transfer Admittance
|YFS|
1
S
VDS = 6V, ID = 0.2A
Diode Forward Voltage (Note 8)
VSD
0.8
1.0
V
IS = 0.2A, VGS = 0V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss

146
190
pF
VDS = 6V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss

10
15
pF
Reverse Transfer Capacitance
Crss

8
13
pF
Gate Resistance
RG

2.4

VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Qg
1.3
1.9
nC
VGS = 4.5V, VDS = 6V, ID =0.2A
Gate-Source Charge
Qgs
0.3
nC
Gate-Drain Charge
Qgd
0.1
nC
Turn-On Delay Time
tD(ON)
1.9
2.7
nS
VDD = 6V, VGS = 4.5V,
RL = 22Ω, RG = 6Ω
Turn-On Rise Time
tR
1.3
nS
Turn-Off Delay Time
tD(OFF)
7.5
11
nS
Turn-Off Fall Time
tF
1.0
nS
Notes:
8. Test pulse width t = 300ms, test with single MOSFET.
9. Guaranteed by design with single MOSFET, not subject to production testing.


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