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DMN1250UFEL-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN1250UFEL-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMN1250UFEL Document number: DS37787 Rev. 3 - 2 2 of 7 www.diodes.com August 2015 © Diodes Incorporated DMN1250UFEL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 12 V Gate-Source Voltage VGSS 8 V Drain Current (Note 6) Continuous TA = +25°C TA = +70°C ID 2.0 1.6 A Pulsed Drain Current (Note 7) IDM 10 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.66 W Total Power Dissipation (Note 6) PD 1.25 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 177 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 100 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on 1"x1", FR-4 PC board with minimum recommended pad layout, and test with single MOSFET. 6. Device mounted on 1"x1", FR-4 PC board with 2 oz. copper, and test with single MOSFET. 7. Repetitive Rating, pulse width limited by junction temperature, and test with single MOSFET. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition STATIC CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 12 V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS 1 µA VDS = 12V, VGS = 0V Gate-Body Leakage Current IGSS 100 nA VDS = 0V, VGS = 8V Gate Threshold Voltage VGS(TH) 0.4 1 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance (Note 8) RDS(ON) 280 450 m Ω VGS = 4.5V, ID = 0.2A 360 550 m Ω VGS = 2.5V, ID = 0.1A Forward Transfer Admittance |YFS| 1 S VDS = 6V, ID = 0.2A Diode Forward Voltage (Note 8) VSD 0.8 1.0 V IS = 0.2A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 146 190 pF VDS = 6V, VGS = 0V f = 1.0MHz Output Capacitance Coss 10 15 pF Reverse Transfer Capacitance Crss 8 13 pF Gate Resistance RG 2.4 Ω VGS = 0V, VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Qg 1.3 1.9 nC VGS = 4.5V, VDS = 6V, ID =0.2A Gate-Source Charge Qgs 0.3 nC Gate-Drain Charge Qgd 0.1 nC Turn-On Delay Time tD(ON) 1.9 2.7 nS VDD = 6V, VGS = 4.5V, RL = 22Ω, RG = 6Ω Turn-On Rise Time tR 1.3 nS Turn-Off Delay Time tD(OFF) 7.5 11 nS Turn-Off Fall Time tF 1.0 nS Notes: 8. Test pulse width t = 300ms, test with single MOSFET. 9. Guaranteed by design with single MOSFET, not subject to production testing. |
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