DMG2301L

Document number: DS37540 Rev. 3 - 2

2 of 6

www.diodes.com

September 2015

© Diodes Incorporated

DMG2301L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Steady

State

-3

-1

A

Pulsed Drain Current (Note 6)

-10

A

Drain-Source Diode Forward Current ( t < 5 sec)

-0.75

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1.5

W

83

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20





V

Zero Gate Voltage Drain Current





-1.0

µA

Gate-Source Leakage





±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.4



-1.2

V

Static Drain-Source On-Resistance





120

m

Ω

150

Diode Forward Voltage





-1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance



476



pF

f = 1.0MHz

Output Capacitance



53



pF

Reverse Transfer Capacitance



45



pF

Total Gate Charge



5.5



nC

Gate-Source Charge



0.9



nC

Gate-Drain Charge



1.8



nC

Turn-On Delay Time



5



ns

Turn-On Rise Time



10



ns

Turn-Off Delay Time



30



ns

Turn-Off Fall Time



20



ns

Notes:

5.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.