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EL-315

Infrared Emitting Diodes(GaAs)

KODENSHI

Forward voltage

Reverse current

Capacitance

Radiant intensity

Peak emission wavelength

Spectral bandwidth 50%

Half angle

The EL-315 a high-power GaAs IRED mounted in a

clear sidelooking package, is compact, low profile, and

easy to mount.

FEATURES

•Compact

•Low profile package

•Low-cost

•Sidelooking plastic package

APPLICATIONS

•Photointerrupters

•Optical switches

•Toys

DIMENSIONS

(Unit : mm)

Rating

Symbol

Item

MAXIMUM RATINGS

Reverse voltage

Forward current

Pulse forward current

*1

Power dissipation

Operating temp.

Storage temp.

Topr.

Tstg.

Tsol.

5

50

0.5

75

-25~+85

-30~+100

240

V

mA

A

mW

℃

℃

℃

Unit

(Ta=25℃)

(Ta=25℃)

ELECTRO-OPTICAL CHARACTERISTICS

f=1MHz

Item

Typ.

25

0.7

940

50

±30

Ct

λp

Δλ

△θ

1.6

10

V

μ

A

pF

mW/sr

nm

nm

deg.

Symbol

Conditions

Min.

Max.

Unit.

*1. pulse width ：tw ≦100 μ

sec.period ：T=10msec.

*2. For MAX.5 seconds at the position of 2 mm from the package