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DMTH6005LPSQ-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMTH6005LPSQ-13
Description  60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6005LPSQ-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMTH6005LPSQ
Document number: DS38359 Rev.1 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH6005LPSQ
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, ID = 12.5A
V
GS = 10V, ID = 50A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250µA
I
D = 1mA
0
10
20
30
40
50
60
70
80
90
100
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 175
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
Q
g (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 50A
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10µs
P
W =1s
P
W =100ms
P
W =10ms
P
W =100µs
P
W =1µs
R
DS(ON) Limited
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on Infinite
Heatsink
V
GS=10V
P
W =1ms


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