DMTH6005LPSQ datasheet(3/7 Pages) DIODES

Part #	DMTH6005LPSQ

Description	60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 7 page

POWERDI is a registered trademark of Diodes Incorporated.

DMTH6005LPSQ

Document number: DS38359 Rev.1 - 2

3 of 7

www.diodes.com

November 2015

DMTH6005LPSQ

0.0

10.0

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50.0

0

0.5

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1.5

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3.5

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4.5

5

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS = 3.0V

V

GS = 4.0V

V

GS = 5.0V

V

GS = 4.5V

V

GS = 3.5V

V

GS = 6.0V

V

GS = 10.0V

0

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10

15

20

25

30

1

2

3

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V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

-55oC

25oC

85oC

150oC

125oC

V

DS = 5V

175oC

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0

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50

I

D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS = 6.0V

V

GS = 10V

V

GS = 4.5V

0

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0.03

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8

12

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V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D = 50A

I

D = 20A

I

D = 12.5A

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D, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

V

GS = 10V

150oC

125oC

-55oC

25oC

85oC

175oC

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0.8

1

1.2

1.4

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1.8

2

-50

-25

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25

50

75

100 125 150 175

T

J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

V

GS = 10V, ID = 50A

V

GS = 4.5V, ID = 12.5A

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