P - HEMT

CFH800

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Infineon Technologies

pg. 1/7

01.03.2002

WS GS CE GaAs

P r e l i m i n a r y D a t a s h e e t

Features

• Low noise figure and high associated gain for

high IP3 receiver stages up to 4GHz

Suitable for PCS CDMA and UMTS applications

(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)

• Low cost miniature package SOT343

• L

• Tape and Reel packaging

ESD:

Electrostatic discharge sensitive device,

observe handling precautions!

Pin assignment:

1 = gate

2 = source

3 = drain

4 = source

Type

Marking

Ordering code

(taped)

Package 1)

CFH 800

N8s

on request

SOT343

Maximum ratings

Symbol

Unit

Drain-source voltage

VDS

5.5

V

Drain-gate voltage

VDG

6.5

V

Gate-source voltage

VGS

-2.0

V

Drain current

ID

160

mA

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

-65...+150

°C

Ptot

350

mW

Thermal resistance

Channel-soldering point source

RthChS

198

K/W

1) Dimensions see page 7