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2N4921 Datasheet(PDF) 1 Page - ON Semiconductor

Part # 2N4921
Description  1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N4921 Datasheet(HTML) 1 Page - ON Semiconductor

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Medium-Power Plastic NPN
Silicon Transistors
...designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Symbol
2N4921
2N4922
2N4923
Unit
Collector–Emitter Voltage
VCEO
40
60
80
Vdc
Collector–Base Voltage
VCB
40
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous (1)
IC
1.0
3.0
Adc
Base Current — Continuous
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
30
0.24
Watts
W/
_C
Operating & Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
4.16
_C/W
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor)
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4921/D
2N4921
thru
2N4923
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
*
CASE 77–09
TO–225AA TYPE
3
2 1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE


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