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2N4921 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N4921 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page Medium-Power Plastic NPN Silicon Transistors ...designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: • Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp • Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25_C • Excellent Safe Operating Area • Gain Specified to IC = 1.0 Amp • Complement to PNP 2N4918, 2N4919, 2N4920 *MAXIMUM RATINGS Rating Symbol 2N4921 2N4922 2N4923 Unit Collector–Emitter Voltage VCEO 40 60 80 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous (1) IC 1.0 3.0 Adc Base Current — Continuous IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 30 0.24 Watts W/ _C Operating & Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS (2) Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 4.16 _C/W (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). (2) Recommend use of thermal compound for lowest thermal resistance. *Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ON Semiconductor) © Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 1 Publication Order Number: 2N4921/D 2N4921 thru 2N4923 *ON Semiconductor Preferred Device 1 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS * CASE 77–09 TO–225AA TYPE 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE |
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